Infrared to Ultraviolet Measurements of Two-Photon Absorption and n2 in Wide Bandgap Solids

نویسندگان

  • Richard DeSalvo
  • Ali A. Said
  • Mansoor Sheik-Bahae
چکیده

The bound electronic nonlinear refractive index, n 2 • and two-photon absorption (2PA) coefficient, 6, are measured in a variety of inorganic dielectric solids at the four harmonics of the Nd:YAG laser using Z scan. The specific materials studied are: barium fluoride (BaF2 ), calcite (CaC03), potassium bromide (KBr), lithium fluoride (LiF), magnesium fluoride (MgFz), sapphire (Ab03), a tellurite glass (75%Te0z+ 20%Zn0 + 5%Na2 0) and fused silica (SiOz), We also report n 2 and 3 in three second-order, x(z), nonlinear crystals: potassium titanyl phosphate (KTiOP04 or KTP), lithium niobate (LiNb03 ), and /)-barium borate (8-BaBz04 or BBO). Nonlinear absorption or refraction can alter the wavelength conversion efficiency in these materials. The results of this study are compared to a simple twoparabolic band model originally developed to describe zincblende semiconductors. This model gives the bandgap energy ( E 9 ) scaling and spectrum of the change in absorption. The dispersion of nz as obtained from a Kramers-Kronig transformation of this absorption change scales as E-,; 4 • The agreement of this theory to data for semiconductors was excellent. However, as could be expected, the agreement for these wide bandgap materials is not as good, although general trends such as increasing nonlinearity with decreasing bandgap energy can be seen.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Infrared to Ultraviolet Measurements of Two-Photon Absorption and n/sub 2/ in Wide Bandgap Solids - Quantum Electronics, IEEE Journal of

The bound electronic nonlinear refractive index, n 2 • and two-photon absorption (2PA) coefficient, 6, are measured in a variety of inorganic dielectric solids at the four harmonics of the Nd:YAG laser using Z scan. The specific materials studied are: barium fluoride (BaF2 ), calcite (CaC03), potassium bromide (KBr), lithium fluoride (LiF), magnesium fluoride (MgFz), sapphire (Ab03), a tellurit...

متن کامل

Sensitive mid-infrared detection in wide-bandgap semiconductors using extreme non-degenerate two-photon absorption

Identifying strong and fast nonlinearities for today’s photonic applications is an ongoing effort1. Materials2–5 and devices6–9 are typically sought to achieve increasing nonlinear interactions. We report large enhancement of two-photon absorption through intrinsic resonances using extremely non-degenerate photon pairs. We experimentally demonstrate two-photon absorption enhancements by factors...

متن کامل

Polarization-dependent nonlinear refraction and two-photon absorption in GaAs/AlAs superlattice waveguides below the half-bandgap

Values for the two-photon absorption coefficient, 2, and nonlinear refractive index coefficients, n2, are measured for a waveguide core made of 14:14 monolayer GaAs/AlAs superlattice at photon energies below the half-bandgap. Two-photon absorption coefficients show significant anisotropy with the TE mode having 2 values up to four times greater than the TM mode. For nonlinear refraction, we det...

متن کامل

Multi-photon absorption and third-order nonlinearity in silicon at mid-infrared wavelengths.

Silicon based nonlinear photonics has been extensively researched at telecom wavelengths in recent years. However, studies of Kerr nonlinearity in silicon at mid-infrared wavelengths still remain limited. Here, we report the wavelength dependency of third-order nonlinearity in the spectral range from 1.6 μm to 6 μm, as well as multi-photon absorption coefficients in the same range. The third-or...

متن کامل

Attosecond optical-field-enhanced carrier injection into the GaAs conduction band

1Department of Physics, ETH Zurich, Zurich, Switzerland. 2Max Planck Institute for the Structure and Dynamics of Matter, Hamburg, Germany. 3Present address: Department of Physics, Politecnico di Milano, Milano, Italy. *e-mail: [email protected]; [email protected] Resolving the fundamental carrier dynamics induced in solids by strong electric fields is essential for future applications...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2014